Buried high sheet resistance structure for high density integrat

Details Buried high sheet resistance structure for high density integrat Buried high sheet resistance structure for high density integrat

1977-10-25

1980-10-14

Clawson, Jr., Joseph E.

357 34, 357 49, H01L 2702

Patent

active

042284503

ABSTRACT:
A high sheet resistance structure for high density integrated circuits and the method for manufacturing such structure is given. The structure includes a silicon region separated from other silicon regions by a dielectric barrier surrounding the region. A resistor of a first conductivity, for example, N type, encompasses substantially the surface of the silicon region. Electrical contacts are made to the resistor. A region highly doped of a second conductivity, for example, P-type, is located below a portion of the resistor region. This region of second conductivity is connected to the surface. Electrical contacts are made to this varied region for biasing purposes. A second region within the same isolated silicon region may be used as a resistor. This region is located below the buried region of second conductivity. Alternatively, the described resistor regions can be connected as transistors. This allows the formation of a standard masterslice which can be personalized at a late stage in the manufacturing to either resistors or transistors in all or a portion of the standard regions.

REFERENCES:
patent: 3430110 (1969-02-01), Goshgarian
patent: 3443176 (1969-05-01), Agusta et al.
patent: 3601669 (1971-08-01), Merryman et al.
patent: 3629667 (1971-12-01), Lubart et al.
patent: 3631309 (1971-12-01), Myers
patent: 3648125 (1972-03-01), Peltzer
patent: 3664893 (1972-05-01), Frazee
patent: 3786318 (1974-01-01), Momoi et al.
patent: 3787710 (1974-01-01), Cunningham
patent: 3801886 (1974-04-01), Imaizumi et al.
patent: 3922707 (1975-11-01), Freed et al.
patent: 3953875 (1976-04-01), Cave et al.
patent: 3990102 (1976-11-01), Okuhara et al.
patent: 4080616 (1978-03-01), Horie
patent: 4110779 (1978-08-01), Rathbone et al.
patent: 4111724 (1978-09-01), Ogive et al.

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