Buried heterostructure with aluminum-free active layer and metho

Details Buried heterostructure with aluminum-free active layer and metho Buried heterostructure with aluminum-free active layer and metho

1997-02-26

2000-01-04

Healy, Brian

Coherent light generators

Particular active media

Semiconductor

372 43, 372 45, 372 50, 257 12, 437129, H01S 319, H01L 2906, H01L 2120

Patent

active

060118113

ABSTRACT:
An epitaxially grown semiconductor heterostructure has an inner region (5) which is substantially laterally confined by confinement regions (9) and has enhanced transverse confinement by enhanced transverse confinement layers (3, 7). The latter layers are not exposed outside the growth chamber during processing, by stopping the etching for producing the lateral confinement, above the lower enhanced transverse confinement layer (3) and growing such an upper layer (7) after making the lateral confinement regions (9). The structure is intended to be used in particular having the inner region act as an active laser region, for instance in InP-based 1.3 .mu.m wavelength lasers. Then the simultaneous lateral confinement, enhanced transverse confinement and exposure protection enables simultaneously a low threshold current, a small temperature sensitivity and reliable, long life operation. The enhanced transverse confinement layers (3, 7) could comprise aluminium protected from oxidation during processing. Such a laser will then be protected from a declined reliability.

REFERENCES:
patent: 4955031 (1990-09-01), Jain
patent: 5058120 (1991-10-01), Nitta et al.
patent: 5065402 (1991-11-01), Kawano
patent: 5102825 (1992-04-01), Brennan et al.
patent: 5212706 (1993-05-01), Jain
patent: 5331655 (1994-07-01), Harder et al.
patent: 5349596 (1994-09-01), Molva et al.
patent: 5355384 (1994-10-01), Inoue et al.
patent: 5381434 (1995-01-01), Bhat et al.
patent: 5412680 (1995-05-01), Swirhun et al.
patent: 5619518 (1997-04-01), Horie et al.
patent: 5889805 (1999-03-01), Botez et al.
P.A. Andrekson et al., "Effect of Thermionic Electron Emission from the Active Layer on the Internal Quantum Efficiency of InGaAsP Lasers Operating at 1.3 .mu.m," IEEE Journal of Quantum Electronics, vol. 30, No. 2, pp. 219-221 (Feb. 1994).
H. Ishikawa et al., "Analysis of Temperature Dependent Optical Gain of Strained Quantum Well Taking Account of Carriers in the SCH Layer," IEEE Photonics Technology Letters, vol. 6, No. 3, pp. 344-347 (Mar. 1994).
H. Nobuhara et al., "1.3 .mu.m wavelength, low-threshold strained quantum well laser on p-type substrate," Electronics Letters, vol. 30, No. 16, pp. 1292-1293 (Aug. 4, 1994).
H.P. Mayer et al., "Low cost High performance Lasers for FITL/FTTH," Proc. 21st Eur. Conf. on Opt. Comm. (ECOC'95--Brussels), pp. 528-537.
S. Yamashita et al., "Low-Threshold (3.2 mA per Element) 1.3 .mu.m In GaAsP MQW Laser Array on a p-Type Substrate," IEEE Photonics Technology Letters, vol. 4, No. 9, pp. 954-957 (Sep. 1992).
C. Zah et al., "High-Performance Uncooled 1.3.increment.m Al.sub.x Ga.sub.y In.sub.1-x-y As/InP Strained-Layer Quantum-Well Lasers for Subscriber Loop Applications," IEEE Journal of Quantum Electronics, vol. 30, No. 2, pp. 511-523 (Feb. 1994).

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