Buried heterostructure semiconductor laser with high-resistivity

Details Buried heterostructure semiconductor laser with high-resistivity Buried heterostructure semiconductor laser with high-resistivity

1986-06-26

1989-03-21

Davie, James W.

Coherent light generators

Particular active media

Semiconductor

357 17, H02S 319

Patent

active

048150835

ABSTRACT:
An improved buried heterostructure semiconductor laser comprises high resistive burying layers positioned at both sides of an active region so that the high speed modulation is possible to be performed and the higher quantum efficiency is obtained for the reason why the capacitance and leakage current are diminished. A further improved buried heterostructure semiconductor laser comprises spacer layers between an active region and respective high resistive burying layers so that the reliability is maintained to be high for the reason why the diffusion of an impurity is avoided from the respective high resistive burying layers to the active region. Further, an improved process for the fabrication of a buried heterostructure semiconductor laser comprises steps of a buried heterostructure semiconductor laser comprises steps of forming mesa stripe including an active region on the upper portion of a double heterostructure and forming high resistive burying layers to be positioned at both sides of the active region.

REFERENCES:
patent: 4660208 (1987-04-01), Johnston, Jr. et al.
"Journal of Lightwave Technology", vol. LT-1, No. 1, Mar. 1983, pp. 195-202, InGaAsP Double-Channel-Planar-Buried-Heterostructure Laser Diod (DC-PBH-LD) with Effective Current Confinement.
"Electronics Letters", vol. 20, Oct. 11, 1984, pp. 856-857, Low-Threshold High-Speed 1-55 um Vapour Phase Transported Buried Heterostructure Lasers (VPTBH).

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