Buried heterostructure semiconductor laser fabricated on a p-typ

Details Buried heterostructure semiconductor laser fabricated on a p-typ Buried heterostructure semiconductor laser fabricated on a p-typ

1995-09-20

1997-11-25

Bovernick, Rodney B.

Coherent light generators

Particular active media

Semiconductor

372 45, H01S 319

Patent

active

056920024

ABSTRACT:
A buried heterostructure semiconductor laser formed on a substrate having a first semiconductor of p-type conductivity has a mesa-striped active layer region having a height extending from a first p-type semiconductor layer at the foot of the mesa to a n-type cladding layer on the top of the mesa. On both sides of the mesa-striped region, a second p-type semiconductor layer, a first n-type semiconductor layer, a third p-type semiconductor layer, and a second semiconductor layer having a band gap smaller than that of the other layers except the active layer are sequentially formed from the substrate side. Additionally, the entire structure is further buried with a n-type semiconductor layer. The second semiconductor layer may be inserted in between the second p-type semiconductor layer and the first n-type semiconductor layer as well. Furthermore, the second semiconductor layer may be of a semiconductor material with lower carrier concentration doping than the other layers except the active layer, which is usually undoped. In an alternative configuration, the two sides of the mesa structure may form a channel into which the aforementioned layers will be buried.

REFERENCES:
patent: 4870650 (1989-09-01), Mink
patent: 5228048 (1993-07-01), Takemoto et al.
patent: 5361271 (1994-11-01), Takiguchi et al.
by Ikuo Mito et al., "InGaAsP Double-Channel-Planar-Buried-Heterostructure Laser Diode (DC-PBH LD) With Effective Current Confinement", Journal of Lightwave Technology, vol. LT-1, No. 1, Mar. 1983.

Affiliated with

Also associated with

Rating

Buried heterostructure semiconductor laser fabricated on a p-typ does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Buried heterostructure semiconductor laser fabricated on a p-typ, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Buried heterostructure semiconductor laser fabricated on a p-typ will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-2113474