Buried heterostructure semiconductor laser device

Coherent light generators – Particular active media – Semiconductor

Patent

Rate now

  [ 0.00 ] – not rated yet Voters 0   Comments 0

Details

372 45, H01S 319

Patent

active

049107445

ABSTRACT:
A semiconductor laser device comprising a semiconductor substrate, an active layer having a refractive index greater than that of said substrate and having an energy gap smaller than that of said substrate, and a cladding layer having a conductivity type different from that of said substrate, in that order, resulting in a double-heterostructure, wherein two parallel grooves with a given distance therebetween are disposed in the double-heterostructure so as to reach said substrate and a first burying layer having the same conductivity type as said substrate, a second burying layer having a conductivity type different from that of said substrate and a third burying layer having the same conductivity type as said substrate are disposed outside of the two grooves in that order, and moreover a semiconductor layer with the flat surface having a conductivity type different from that of said substrate is disposed over the third burying layer and the area positioned between the two parallel grooves.

REFERENCES:
patent: 4525841 (1985-06-01), Kitamura et al.
patent: 4573161 (1986-02-01), Sakai et al.
patent: 4597085 (1986-06-01), Mito et al.
patent: 4661961 (1987-04-01), Nelson et al.
patent: 4730329 (1988-03-01), Yoshida et al.
patent: 4745612 (1988-05-01), Hayakawa et al.
patent: 4839900 (1989-06-01), Yoshida et al.
Smith, Xerox Disclosure Journal, 11(4):151-152; "A Method for Fabricating an Index Guided Laser".
Hayakawa et al. (1986), Applied Physics Letters, 49(11):636-638; "Low Current Threshold AlGaAs Visible Laser Diodes with an (AlGaAs).sub.n (GaAs).sub.m Supper Lattice Quantum Well".

LandOfFree

Say what you really think

Search LandOfFree.com for the USA inventors and patents. Rate them and share your experience with other people.

Rating

Buried heterostructure semiconductor laser device does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Buried heterostructure semiconductor laser device, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Buried heterostructure semiconductor laser device will most certainly appreciate the feedback.

Rate now

     

Profile ID: LFUS-PAI-O-797762

  Search
All data on this website is collected from public sources. Our data reflects the most accurate information available at the time of publication.