Coherent light generators – Particular active media – Semiconductor
Patent
1987-12-08
1990-03-20
Sikes, William L.
Coherent light generators
Particular active media
Semiconductor
372 45, H01S 319
Patent
active
049107445
ABSTRACT:
A semiconductor laser device comprising a semiconductor substrate, an active layer having a refractive index greater than that of said substrate and having an energy gap smaller than that of said substrate, and a cladding layer having a conductivity type different from that of said substrate, in that order, resulting in a double-heterostructure, wherein two parallel grooves with a given distance therebetween are disposed in the double-heterostructure so as to reach said substrate and a first burying layer having the same conductivity type as said substrate, a second burying layer having a conductivity type different from that of said substrate and a third burying layer having the same conductivity type as said substrate are disposed outside of the two grooves in that order, and moreover a semiconductor layer with the flat surface having a conductivity type different from that of said substrate is disposed over the third burying layer and the area positioned between the two parallel grooves.
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Hayakawa et al. (1986), Applied Physics Letters, 49(11):636-638; "Low Current Threshold AlGaAs Visible Laser Diodes with an (AlGaAs).sub.n (GaAs).sub.m Supper Lattice Quantum Well".
Kaneiwa Shinji
Kudo Hiroaki
Takiguchi Haruhisa
Yoshida Toshihiko
Holloway B. R. R.
Sharp Kabushiki Kaisha
Sikes William L.
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