Buried heterostructure laser with quaternary current blocking la

Details Buried heterostructure laser with quaternary current blocking la Buried heterostructure laser with quaternary current blocking la

1996-10-11

2000-02-22

Davie, James W.

Coherent light generators

Particular active media

Semiconductor

372 45, 372 48, H01S 319

Patent

active

060288752

ABSTRACT:
The lateral confinement region provided on both sides of an active region stripe of a buried heterostructure laser is formed of an alloy of InGaAsP instead of the conventional Fe doped InP material. This results in much improved regrowth morphology while still achieving good current and light blocking properties.

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