Buried heterostructure laser diode

Details Buried heterostructure laser diode Buried heterostructure laser diode

1981-06-26

1984-01-31

Davie, James W.

Coherent light generators

Particular active media

Semiconductor

357 17, H01S 319

Patent

active

044293976

ABSTRACT:
According to the present invention, an active semiconductor layer is provided on a mesa top of a semiconductor substrate having a strip-shaped mesa structure. A first clad layer is provided on the surface of the active layer and on the sides of the mesa to burry the top active region. Thereafter a pair of current blocking layers are provided on the first clad layer except for the top surface portion of the mesa stripe and a second clad layer is provided on the current blocking layers and the exposed first clad layer.

REFERENCES:
patent: 4166253 (1979-08-01), Small et al.

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