Buried heterostructure laser diode

Details Buried heterostructure laser diode Buried heterostructure laser diode

1981-04-10

1984-01-10

Davie, James W.

Coherent light generators

Particular active media

Semiconductor

357 17, 372 50, H01S 319

Patent

active

044256507

ABSTRACT:
A buried heterostructure laser diode and method for making the same wherein an active layer is provided in a semiconductor region forming a mesa stripe, and, except for the top surface portion of the mesa stripe, the side surface portion of the mesa stripe and the remainder are covered by a current-blocking layer. Furthermore, a current-confining layer covers only this current-blocking layer, and a clad layer covers the current-blocking layer and the top surface portion of the mesa stripe.

REFERENCES:
patent: 4230997 (1980-10-01), Hartman et al.
Hirao et al., "Fabrication and Characterization of Narrow Stripe InGaAsP/InP Buried Heterostructure Lasers", Journal of Applied Physics, vol. 51, No. 8, Aug. 1980, pp. 4539-4540.

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