Buried heterostructure devices with unique contact-facilitating

Details Buried heterostructure devices with unique contact-facilitating Buried heterostructure devices with unique contact-facilitating

1985-10-22

1987-04-28

Davie, James W.

Coherent light generators

Particular active media

Semiconductor

357 16, 357 17, 357 65, H01L 2348, H01S 319

Patent

active

046619615

ABSTRACT:
In the fabrication of buried heterostructure InP/InGaAsP lasers, mask undercutting during the mesa etching step is alleviated by a combination of steps which includes the epitaxial growth of a large bandgap InGaAsP cap layer (1.05 eV.ltorsim.E.sub.g .ltorsim.1.24 eV) and the plasma deposition of a SiO.sub.2 etch masking layer. Alternatively, the cap layer may be a bilayer: an InGaAs layer or narrow bandgap InGaAsP (E.sub.g .ltorsim.1.05 eV), which has low contact resistance, and a thin InP protective layer which reduces undercutting and which is removed after LPE regrowth is complete. In both cases, etching at a low temperature with agitation has been found advantageous.

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R. J. Nelson et al., "CW Electrooptical Properties of InGaAsP (.lambda.=1.3 .mu.m) Buried-Heterostructure Lasers", IEEE Journal of Quantum Electronics, vol. QE-17, No. 2, Feb. 1981, pp. 202-206.
R. J. Nelson et al., "Self-sustained Pulsations and Negative-resistance Behavior in InGaAsP (.lambda.=1.3 .mu.m) Double-heterostructure Lasers", Applied Physics Letters, vol. 37, No. 9, Nov. 1, 1980, pp. 769-771.
M. Hirao et al., "Fabrication and Characterization of Narrow Stripe InGaAsP/InP Buried Heterostructure Lasers", Journal of Applied Physics, vol. 51, No. 8, Aug. 1980, pp. 4539-4540.
R. J. Nelson et al., "Electrical-Optical Characteristics of Buried Waveguide Heterostructure InGaAsP Injection Lasers", International Electron Devices Meeting Technical Digest, Washington, D.C., Dec. 8-10, 1980, pp. 370-373.
G. Olsen et al., "1.3 .mu.m LPE- and VPE-Grown InGaAsP Edge-Emitting LED's", IEEE Journal of Quantum Electronics, vol. QE-17, No. 10, Oct. 1981, pp. 2130-2134.

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