Buried heterojunction laser

Details Buried heterojunction laser Buried heterojunction laser

1983-02-01

1986-12-16

Davie, James W.

Coherent light generators

Particular active media

Semiconductor

357 17, 372 48, H01S 319

Patent

active

046302794

ABSTRACT:
Disclosed herein is a semiconductor laser device including at least an optical confinement region having at least first, second and third semiconductor layers disposed on a semiconductor substrate, wherein the first and third semiconductor layers have refractive indices greater than the refractive index of the second semiconductor layer but have forebidden band gap smaller than that of the second semiconductor layer and the conductivity types of the first and third semiconductor layers are opposite to each other; the second semiconductor layer has a smooth change of its thickness in two directions parallel to a junction surface of the optical confinement region; and a difference exists in the refractive indices of the first and third semiconductor layers.

REFERENCES:
patent: 3978428 (1976-08-01), Burnham et al.
patent: 4321556 (1982-03-01), Sakuma
patent: 4404678 (1983-09-01), Aiki et al.
Aiki et al., "Transverse Mode Stabilized Al.sub.x Ga.sub.1-x As Injection Lasers with Channeled-Substrate-Planar-Structure" IEEE SQE vol. QE-14 No. 2 Feb. 1978, pp. 89-94.

Affiliated with

Also associated with

Rating

Buried heterojunction laser does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Buried heterojunction laser, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Buried heterojunction laser will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-250556