Buried Hall element

Details Buried Hall element Buried Hall element

1985-12-18

1987-06-16

Edlow, Martin H.

357 55, 357 47, H01L 2722

Patent

active

046739645

ABSTRACT:
A Hall element incorporated inside a semiconductor body has a P-N junction barrier which surrounds the active zone of the Hall element in all directions. The output of the Hall element is connected through a feedback control circuit to control the thickness of the P-N junction barrier, thereby ensuring long duration, temperture stability and linearity for the Hall element.

REFERENCES:
patent: 3372070 (1968-03-01), Zuk
patent: 3668439 (1972-06-01), Fujikawa et al.
patent: 3852802 (1974-12-01), Wolf et al.
patent: 4129880 (1978-12-01), Vinal
patent: 4141026 (1979-02-01), Bate et al.
patent: 4253107 (1981-02-01), MacDougall
"The Vertical Hall-Effect Device" by R. S. Popovic, in IEEE Electron Device Letters, vol. EDL-5, No. 9, Sep. 1984, pp. 357-358.
"Hall Effect Probes and Their Use in a Fully Automated Magnetic Measuring System" by M. W. Poole and R. P. Walker, in IEEE Transactions on Magnetics, vol. MAG-17, No. 5, Sep. 1981, pp. 2129-2132.

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