Buried gate JFET

Details Buried gate JFET Buried gate JFET

1987-10-29

1989-07-04

Hearn, Brian E.

Fishing, trapping, and vermin destroying

437 38, 437 78, 437 79, 437228, H01L 2144, H01L 2148

Patent

active

048450510

ABSTRACT:
A process for manufacturing a JFET in accordance with our invention includes the steps of forming an N- layer (12) on an N+ substrate (10), and forming an N+ layer (14) on the N- layer. A plurality of trenches (19) are etched to extend through the N+ layer and through a portion of the N- layer. A layer of sidewall oxide (20) is grown along the vertical walls of the trenches. The trenches are then extended so that the sidewall oxide only covers a portion of the vertical walls of the trenches. A layer of P type polysilicon (22) is then deposited in the trenches and impurities are diffused from the P type polysilicon into a surrounding portion of the N- layer to thereby form a plurality of P type regions (23). The size of the depletion region between the P type regions and the N- layer is controlled by applying selected voltages to the P type polysilicon, thereby controlling the current through the resulting JFET.

REFERENCES:
patent: 4375124 (1983-03-01), Cogan
patent: 4417385 (1983-11-01), Temple
patent: 4466176 (1984-08-01), Temple
patent: 4476622 (1984-10-01), Cogan
patent: 4520552 (1985-06-01), Arnould et al.
patent: 4543706 (1985-10-01), Bencuya et al.
patent: 4566172 (1986-01-01), Bencuya et al.
patent: 4587712 (1986-05-01), Baliga
patent: 4689871 (1987-09-01), Malhi
patent: 4745081 (1988-05-01), Beyer et al.
Ting, "Silicide for Contacts and Interconnects", International Electronics Device Meeting 1984, pp. 110-113.
Kim et al., "Mo/TiW Contact for VLSI Applications", International Electronic Device Meeting 1984, pp. 134-137.
Sachdev et al., "CVD Tungsten and Tungsten Silicide for VLSI Applications", Semiconductor International, May, 1985, pp. 306-310.

Affiliated with

Also associated with

Rating

Buried gate JFET does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Buried gate JFET, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Buried gate JFET will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-852230