Buried field shield for an integrated circuit

Details Buried field shield for an integrated circuit Buried field shield for an integrated circuit

1984-06-15

1986-07-15

Weisstuch, Aaron

Metal working

Method of mechanical manufacture

Assembling or joining

29576E, 29577C, 29580, 148DIG25, 148DIG50, 148DIG135, 148187, H01L 2120, H01L 2131

Patent

active

045997926

ABSTRACT:
A method for fabrication of a buried field shield in a semiconductor substrate. A seed substrate is prepared by depositing an epitaxial layer or a seed wafer and then depositing a heavily doped layer and a thin dielectric. The thin dielectric is patterned for contact holes and then a conductive field shield is deposited and patterned. A thick quartz layer is deposited over the field shield and dielectric. A mechanical substrate is anodically bonded to the quartz of the seed substrate and the original seed wafer is etched back to expose the epitaxial layer for further fabrication.

REFERENCES:
patent: 3846198 (1974-11-01), Wen et al.
patent: 3959045 (1976-05-01), Antypas
patent: 4089021 (1978-05-01), Sato et al.
patent: 4290831 (1981-09-01), Ports et al.
patent: 4404737 (1983-09-01), Kanzaki et al.
patent: 4408386 (1983-10-01), Takayashiki et al.
Jastrzebski, "Comparison of Different SOI Technologies" RCA Review, vol. 44, Jun. 1983, pp. 251-269.
Kimura et al., "Epitaxial Film Transfer Technique" Applied Physics Letter 43(3), Aug. 1, 1983, pp. 263-265.

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