Buried contact trench process

Details Buried contact trench process Buried contact trench process

1995-03-17

1996-02-27

Fourson, George

Fishing, trapping, and vermin destroying

437924, H01L 2144

Patent

active

054948487

ABSTRACT:
A new method of forming improved buried contact junctions is described. A layer of gate silicon oxide and a first polysilicon layer are provided overlying the surface of a semiconductor substrate. The first polysilicon and gate silicon oxide layers are etched away where they are not covered by a buried contact mask to provide an opening to the semiconductor substrate. A second layer of polysilicon is deposited over the first polysilicon layer and within the opening. The second polysilicon layer is doped with dopant which is driven in to form a buried contact junction within the semiconductor substrate under the opening. A layer of silicon oxide is deposited overlying the second polysilicon layer. The oxide and second polysilicon layers are patterned to form a polysilicon contact overlying the buried contact junction wherein the mask used for the patterning is misaligned and wherein a portion of the buried contact junction is exposed and wherein a portion of the first polysilicon layer remains as residue. A photoresist mask is formed covering the polysilicon contact and extending on either side of the polysilicon contact so that the exposed portion of the buried contact junction is covered by the photoresist mask. The first polysilicon layer residue is etched away wherein the photoresist mask protects the exposed portion of the buried contact junction from the etching completing the formation of a buried contact in the fabrication of an integrated circuit.

REFERENCES:
patent: 5063172 (1991-11-01), Manlex
patent: 5272099 (1993-12-01), Chou et al.
patent: 5350712 (1994-09-01), Shibata

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