Buried contact structure

Details Buried contact structure Buried contact structure

1997-05-05

1999-09-14

Thomas, Tom

Active solid-state devices (e.g., transistors, solid-state diode

Combined with electrical contact or lead

Of specified material other than unalloyed aluminum

257382, 257368, 257588, 257408, H01L 2976, H01L 2994, H01L 31062, H01L 27082

Patent

active

059527200

ABSTRACT:
A buried contact structure is provided for forming a contact between a source/drain region of a MOSFET and polysilicon conducting line. The polysilicon conducting line is formed on a field oxide region and extends onto the surface of the semiconductor substrate near the source/drain region. A polysilicon sidewall structure is formed in contact with the vertical edge of the polysilicon conducting line and the horizontal surface of the source/drain region to provide contact between the polysilicon conducting line and the source/drain region.

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patent: 5607881 (1997-03-01), Huang
patent: 5608240 (1997-03-01), Kumagai
patent: 5698883 (1997-12-01), Mizuno
patent: 5712503 (1998-01-01), Kim et al.

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