Buried contact oxide etch with poly mask procedure

Details Buried contact oxide etch with poly mask procedure Buried contact oxide etch with poly mask procedure

1995-04-10

1996-10-08

Quach, T. N.

Fishing, trapping, and vermin destroying

437193, 437195, H01L 21283, H01L 21302

Patent

active

055630987

ABSTRACT:
A method of forming buried contact holes is described. A layer of silicon oxide is provided overlying a semiconductor substrate. A layer of polysilicon is deposited overlying the silicon oxide layer. The polysilicon layer is covered with a layer of photoresist which is exposed and developed to provide a photoresist mask. The polysilicon layer is etched away where it is not covered by the photoresist mask wherein a polymer buildup is formed on the sidewalls of the polysilicon layer. Ions are implanted into the silicon oxide layer not covered by the photoresist mask. The photoresist mask is removed whereby the polymer buildup is also removed. Thereafter, the silicon oxide layer not covered by the polysilicon layer is etched away to complete the formation of the buried contact hole with reduced polymer buildup in the fabrication of an integrated circuit.

REFERENCES:
patent: 4950620 (1990-08-01), Harrington, III
patent: 5147499 (1992-09-01), Szwejkowski et al.
patent: 5201993 (1993-04-01), Langley
patent: 5326713 (1994-07-01), Lee
patent: 5410174 (1995-04-01), Kalnitsky

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