Buried contact method to release plasma-induced charging damage

Details Buried contact method to release plasma-induced charging damage Buried contact method to release plasma-induced charging damage

1995-08-03

1997-11-25

Niebling, John

Fishing, trapping, and vermin destroying

437195, 1566431, H01L 2128

Patent

active

056912340

ABSTRACT:
A method for eliminating plasma-induced charging damage during manufacture of an integrated circuit is described. A semiconductor substrate having a first conductivity type is provided. An oxide layer is formed on the semiconductor substrate. An opening is formed in the oxide layer. A polysilicon layer is formed over the oxide layer and in the opening. A diffusion region is formed in the semiconductor substrate, connected to the polysilicon layer through the opening, having a second conductivity type opposite to the first conductivity type, whereby a buried contact is formed. The buried contact is connected, through the substrate, to a ground reference. Further processing in a plasma environment is performed that would normally produce charging damage to the integrated circuit, but whereby the buried contact prevents the charging damage.

REFERENCES:
patent: 5350710 (1994-09-01), Hong et al.
patent: 5393701 (1995-02-01), Ko et al.
S. Wolf, "Silicon Processing for the VLSI Era, vol. 2,", Lattice Press, 1990, pp. 160-162.
Shone et al, "Gate Oxide Charging and Its Elimination for Metal Capacitor and Transistor in VLSI CMOS Double Layer Metal Technology", Pubin Symposium on Symposium on VLSI Technology pp. 73-74 in Jun., 1988.

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