Buried circumferential electrode microcavity plasma device...

Active solid-state devices (e.g. – transistors – solid-state diode – Gate arrays – With particular signal path connections

Reexamination Certificate

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C313S582000, C313S584000, C313S631000

Reexamination Certificate

active

08004017

ABSTRACT:
A preferred embodiment microcavity plasma device array of the invention includes a plurality of first metal circumferential metal electrodes that surround microcavities in the device. The first circumferential electrodes are buried in a metal oxide layer and surround the microcavities in a plane transverse to the microcavity axis, while being protected from plasma in the microcavities by the metal oxide. In embodiments of the invention, the circumferential electrodes can be connected in patterns. A second electrode(s) is arranged so as to be isolated from said first electrodes by said first metal oxide layer. In some embodiments, the second electrode(s) is in a second layer, and in other embodiments the second electrode(s) is also within the first metal oxide layer. A containing layer, e.g., a thin layer of glass, quartz, or plastic, seals the discharge medium (plasma) into the microcavities. In a preferred method of formation embodiment, a metal foil or film is obtained or formed with micro-holes. The foil is anodized to form metal oxide. One or more self-patterned metal electrodes are automatically formed and buried in the metal oxide created by the anodization process. The electrodes form in a closed circumference around each microcavity in a plane(s) transverse to the microcavity axis, and can be electrically isolated or connected. Preferred embodiments provide inexpensive microplasma device electrode structures and a fabrication method for realizing microplasma arrays that are lightweight and scalable to large areas. Electrodes buried in metal oxide and complex patterns of electrodes can also be formed without reference to microplasma devices—that is, for general electrical circuitry.

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