Electrical transmission or interconnection systems – Nonlinear reactor systems – Parametrons
Patent
1978-09-20
1979-09-25
Larkins, William D.
Electrical transmission or interconnection systems
Nonlinear reactor systems
Parametrons
357 24, G11C 1928, H01L 2978
Patent
active
041692314
ABSTRACT:
A buried channel to surface channel charge coupled device includes a blocking gate and a transfer gate situated between a buried channel gate and a surface gate for transferring electron charge from the buried channel to the surface channel. The blocking gate is located over the buried channel and the transfer gate straddles the buried and surface channels. The blocking gate serves to overcome the potential barrier associated with buried to surface channel transfers.
REFERENCES:
patent: 3792322 (1974-02-01), Boyle et al.
patent: 3796932 (1974-03-01), Amelio et al.
patent: 3858232 (1974-12-01), Boyle et al.
patent: 3986197 (1976-10-01), Ablassmeier
Sequin et al., Charge Transfer Devices, Academic Press, N.Y., (7/75), pp. 11-15, 62-69, 101, 107-109, 243-247.
Theunissen, "Charge Transfer Devices, Part I, Physical Principles," Microelectronique, vol. 54, (8/74), pp. 317-324.
Sequin et al., "Linearity of Electrical Charge Injection into Charge Coupled Devices," IEEE J. Solid-State Circuits, vol. Sc-10, (4/75), pp. 81-92.
Braatz Paul O.
Grinberg Jan
Nash J. Gregory
Waldner Michael
Hughes Aircraft Company
Larkins William D.
MacAllister W. H.
Munson Gene M.
Wallace Robert M.
LandOfFree
Buried channel to surface channel CCD charge transfer structure does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Buried channel to surface channel CCD charge transfer structure, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Buried channel to surface channel CCD charge transfer structure will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-1986774