Active solid-state devices (e.g. – transistors – solid-state diode – Heterojunction device – Field effect transistor
Reexamination Certificate
2005-11-29
2005-11-29
Pham, Long (Department: 2814)
Active solid-state devices (e.g., transistors, solid-state diode
Heterojunction device
Field effect transistor
C257S194000
Reexamination Certificate
active
06969875
ABSTRACT:
A buried channel FET including a substrate, a relaxed SiGe layer, a channel layer, a SiGe cap layer, and an ion implanted dopant supply. The ion implanted dopant supply can be in either the SiGe cap layer or the relaxed SiGe layer. In one embodiment the FET is a MOSFET. In another embodiment the FET is within an integrated circuit. In yet another embodiment, the FET is interconnected to a surface channel FET.
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AmberWave Systems Corporation
Goodwin & Procter LLP
Le Thao X.
Pham Long
LandOfFree
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