Active solid-state devices (e.g. – transistors – solid-state diode – Heterojunction device – Field effect transistor
Reexamination Certificate
2011-06-21
2011-06-21
Fahmy, Wael M (Department: 2814)
Active solid-state devices (e.g., transistors, solid-state diode
Heterojunction device
Field effect transistor
C257SE21409, C257SE27061, C438S172000, C438S282000
Reexamination Certificate
active
07964896
ABSTRACT:
A semiconductor-containing heterostructure including, from bottom to top, a III-V compound semiconductor buffer layer, a III-V compound semiconductor channel layer, a III-V compound semiconductor barrier layer, and an optional, yet preferred, III-V compound semiconductor cap layer is provided. The barrier layer may be doped, or preferably undoped. The III-V compound semiconductor buffer layer and the III-V compound semiconductor barrier layer are comprised of materials that have a wider band gap than that of the III-V compound semiconductor channel layer. Since wide band gap materials are used for the buffer and barrier layer and a narrow band gap material is used for the channel layer, carriers are confined to the channel layer under certain gate bias range. The inventive heterostructure can be employed as a buried channel structure in a field effect transistor.
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Extended European search report dated Sep. 14, 2009.
Kiewra Edward W.
Koester Steven J.
Sadana Devendra K.
Shahidi Ghavam
Sun Yanning
Fahmy Wael M
Ingham John C
International Business Machines - Corporation
Percello, Esq. Louis J.
Scully , Scott, Murphy & Presser, P.C.
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