Buried channel MESFET with backside source contact

Details Buried channel MESFET with backside source contact Buried channel MESFET with backside source contact

1985-07-15

1986-11-18

Larkins, William D.

357 56, 357 20, 357 15, 357 68, H01L 2980, H01L 2906, H01L 2920

Patent

active

046240047

ABSTRACT:
The fabrication of high performance and reliable Buried Channel Field Effect Transistor (BCFET) using Schottky gate junction and heavily doped N layers for the source and drain electrode is described. The BCFET is composed of a semi-insulating substrate in which two N layers for the drain electrodes and one N layer for the source electrode are formed in one of the semi-insulating surface. The N source electrode is centrally located between the two N drain electrodes and all three lie in the same plane. The source and drain electrodes are separated by a thin semi-insulating layer, the length of which can range from 0.5 micron to several micron range, depending on the desired voltage breakdown. A Schottky gate is defined in an active N layer directly above the source N layer. The ohmic contacts for the source and drain N layers are defined several microns away from the Schottky junction, resulting in a considerable improvement in device reliability. Reliability is further enhanced by the fact that the resulting device is buried within the material where it is insulated from the ambient.

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Cady, Jr. et al., "Integration Technique for Closed Field Effect Transistors", IBM Tech. Discl. Bull., vol. 16, No. 11, Apr. 1974, pp. 3519-3520.

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