Buried channel FET with lateral growth over amorphous region

Details Buried channel FET with lateral growth over amorphous region Buried channel FET with lateral growth over amorphous region

1989-02-03

1990-06-19

Carroll, J.

357 49, 357 55, 357 56, 357 58, H01L 2780, H01L 2712, H01L 2906

Patent

active

049357891

ABSTRACT:
A buried channel field effect transistor is provided by in situ growth of all epitaxial layers growing laterally towards each other along central amorphous semi-insulating humps (1222, 1224) and merging (1232) above the humps to epitaxially grow in single crystalline form to provide the active N layer (1232).

REFERENCES:
patent: 3609477 (1971-09-01), Drangeid et al.
patent: 3663873 (1972-05-01), Yagi
patent: 3681668 (1972-08-01), Kobayashi
patent: 3804681 (1974-04-01), Drangeid et al.
patent: 3912546 (1975-10-01), Hunsperger et al.
patent: 3928092 (1975-12-01), Ballamy et al.
patent: 3931633 (1976-01-01), Shannon et al.
patent: 4101922 (1978-07-01), Tihanyi et al.
patent: 4111725 (1978-09-01), Cho et al.
patent: 4141021 (1979-02-01), Decker
patent: 4156879 (1979-05-01), Lee
patent: 4236166 (1980-11-01), Cho et al.
patent: 4244097 (1981-01-01), Cleary
patent: 4249190 (1981-02-01), Cho
patent: 4265934 (1981-05-01), Ladd, Jr.
patent: 4266233 (1981-05-01), Bertiotti et al.
patent: 4381202 (1983-04-01), Mori et al.
patent: 4404732 (1983-09-01), Andrade
patent: 4426767 (1984-01-01), Swanson et al.
patent: 4489478 (1984-12-01), Sakurai
patent: 4551904 (1985-11-01), Berenz et al.
patent: 4575924 (1986-03-01), Reed et al.
patent: 4601096 (1986-07-01), Calviello
patent: 4624004 (1986-11-01), Calviello
patent: 4724220 (1988-02-01), Calviello
F.F. Tang, "Interplanar LSI Structure", IBM Technical Disclosure Bulletin, vol. 20 (Sep. 1977) pp. 1604-1605.
"Integration Technique for Closed Field Effect Transistors", Cady, Jr., et al., IBM Tech. Discl. Bulletin, vol. 16; No. 11, Apr. 1974, pp. 3519-3520.
"The Opposed Gate-Source Transistor (OGST): A New Millimeter Wave Transistor Structure", John J. Berenz, G. C. Dalman and C. A. Lee, TRW Defense and Space Systems Group, Redondo Beach CA 90278 and Cornell University, School of Electrical Engineering, Ithaca, N.Y. 14853.

Affiliated with

Also associated with

Rating

Buried channel FET with lateral growth over amorphous region does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Buried channel FET with lateral growth over amorphous region, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Buried channel FET with lateral growth over amorphous region will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-2263402