Buried channel CMOS imager and method of forming same

Details Buried channel CMOS imager and method of forming same Buried channel CMOS imager and method of forming same

2005-11-22

2005-11-22

Mulpuri, Savitri (Department: 2812)

Semiconductor device manufacturing: process

Making device or circuit responsive to nonelectrical signal

Responsive to electromagnetic radiation

C438S200000, C438S231000, C438S526000

Reexamination Certificate

active

06967121

ABSTRACT:
A buried channel CMOS imager having an improved signal to noise ratio is disclosed. The buried channel CMOS imager provides reduced noise by keeping collected charge away from the surface of the substrate, thereby improving charge loss to the substrate. The buried channel CMOS imager thus exhibits a better signal-to-noise ratio. Also disclosed are processes for forming the buried channel CMOS imager.

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