Buried channel charge coupled device with semi-insulating substr

Details Buried channel charge coupled device with semi-insulating substr Buried channel charge coupled device with semi-insulating substr

1979-03-12

1981-08-18

Munson, Gene M.

Electrical transmission or interconnection systems

Nonlinear reactor systems

Parametrons

357 15, 357 56, 307221D, H01L 2978, H01L 2956, H01L 2906, G11C 1928

Patent

active

042850002

ABSTRACT:
A charge coupled device has a semi-insulating semiconductor for a substrate. Resistivity of the semiconductor is at least 10.sup.6 ohm cm. A semi-conductive layer is grown epitaxially or is implanted on the substrate to form a thin, active, charge transport layer. A row of parallel, closely spaced gates on the charge transport layer provides individual storage wells in the charge transport layer. In a preferred embodiment, ohmic contacts adjacent the first and last gates in the row of gates provide a means for injecting a signal into the charge transport layer and a means for detecting the signal. Preferably, the substrate is semi-insulating GaAs and the gates are Schottky barrier gates.

REFERENCES:
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patent: 3739240 (1973-06-01), Krambeck
patent: 3965481 (1976-06-01), Esser
patent: 3986197 (1976-10-01), Ablassmeier
patent: 4012759 (1977-03-01), Esser
patent: 4032952 (1977-06-01), Ohba et al.
patent: 4151539 (1979-04-01), Barron et al.
Deyhimy et al., "GaAs Charge-Coupled Devices", Applied Physics Lett., vol. 32, (15 Mar. 78), pp. 383-385.
Milnes et al., Heterojunctions and Metal-Semiconductor Junctions, Academic Press, (1972), p. 8.
Hartnagel et al., "Increased Signal Speed By GaAs CCD's", AEU vol. 29, (1975), pp. 286-288.
Tuyl et al., "High-Speed Integrated Logic With GaAs Mesfet's", IEEE J. Solid-State Circuits, vol. SC-9, (10/74), pp. 269-276.
Hughes et al., "A CCD on Galium Arsenide", Int. Conf. Tech. and Applications Charge Coupled Devices, Edinburgh (9/74), Proc., pp. 270-273.
Scheurmeyer et al., "New Structures For Charge-Coupled Devices", Proc. IEEE, vol. 60, (11/72), pp. 1444-1445.
Kellner et al., "A Schottky-Barrier CCD on GaAs", IEEE Int. Electron Devices Meeting, (12/77), Session 24, Paper 24.7, pp. 599-600.

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