Buried base vertical bipolar power transistor with improved curr

Details Buried base vertical bipolar power transistor with improved curr Buried base vertical bipolar power transistor with improved curr

1994-06-28

1996-09-17

Hille, Rolf

Active solid-state devices (e.g., transistors, solid-state diode

Bipolar transistor structure

With base region having specified doping concentration...

257582, 257580, 257549, 257548, 257550, 257513, 257539, 257577, H01L 2972, H01L 2990, H01L 2702

Patent

active

055571395

ABSTRACT:
The transistor comprises a buried base P region, a buried emitter N+ region with elongate portions (fingers), deep contact P+ base regions, emitter N+ interconnection regions serving balancing resistor functions, and base, emitter, and collector surface contact electrodes. To provide a higher current gain and a larger safe operation area, with each emitter "finger" there are associated a screening P region interposed between the "finger" and a part of the respective N+ interconnection region, and a contact N+ region which extends to the "finger" and is surface connected to the screening P region by a dedicated electrode.

REFERENCES:
patent: 4130826 (1978-12-01), Bachle et al.
patent: 4506280 (1985-03-01), Merrill
patent: 4652895 (1987-03-01), Roskos
patent: 4933739 (1990-06-01), Harari
patent: 5274267 (1993-12-01), Moksvold
patent: 5408124 (1995-04-01), Palara

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