Active solid-state devices (e.g. – transistors – solid-state diode – Schottky barrier – Avalanche diode
Patent
1993-03-17
1994-08-09
Hille, Rolf
Active solid-state devices (e.g., transistors, solid-state diode
Schottky barrier
Avalanche diode
257551, 257603, H01L 2990
Patent
active
053369203
ABSTRACT:
An avalanche diode structure incorporated in an integrated circuit is embodied by the lateral junction between two adjacent buried layers having opposite conductivity types and a high doping level. This diode includes: a first highly doped buried layer of the same first conductivity type as the integrated circuit substrate; a second highly doped buried layer of the second conductivity type, surrounding the first buried layer and laterally contacting the first layer; and a third low doped buried layer of the second conductivity type disposed beneath the first buried layer and overlapping with respect to the second layer so as to also contact a portion of the second buried layer.
REFERENCES:
patent: 4872039 (1989-10-01), Stabile
Patent Abstracts of Japan, vol. 7, No. 170 (E-189) Jul. 27, 1983 & JP-A 58 078 452 (Tokyo Shibaura Denki KK) May 12, 1983.
Patent Abstracts of Japan, vol. 8, No. 119 (E-248) Jun. 5, 1984 & JP-A-59 032 177 (Tokyo Shibaura Denki KK) Feb. 21, 1984.
IBM Technical Disclosure Bulletin, vol. 28, No. 8, Jan., 1986, New York, US, pp. 3551-3552, "Gate Dielectric Breakdown Avoidance Utilizing Zener Breakdown of Heavily-Doped Junctions".
Hardy David B.
Hille Rolf
SGS-Thomson Microelectronics S.A.
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