Buried array capacitor and microelectronic structure...

Details Buried array capacitor and microelectronic structure... Buried array capacitor and microelectronic structure...

2006-06-20

2006-06-20

Vu, David (Department: 2818)

Active solid-state devices (e.g., transistors, solid-state diode

Housing or package

With contact or lead

C361S302000

Reexamination Certificate

active

07064427

ABSTRACT:
A unitary buried array capacitor and microelectronic structures incorporating such capacitors are disclosed. A unitary buried array capacitor can be formed by a top layer of electrode, a middle layer of dielectric, and a bottom layer of electrode. A first electrode lead, a second electrode lead and at least one interconnect line pass through the three layers while only the first electrode lead making electrical contact with the top layer of electrode and only the second electrode lead making electrical contact with the bottom electrode.

REFERENCES:
patent: 6847527 (2005-01-01), Sylvester et al.

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