Buried air dielectric isolation of silicon islands

Details Buried air dielectric isolation of silicon islands Buried air dielectric isolation of silicon islands

1991-10-23

1993-07-13

Munson, Gene M.

Active solid-state devices (e.g., transistors, solid-state diode

Integrated circuit structure with electrically isolated...

Including dielectric isolation means

257508, 257770, H01L 2712

Patent

active

052276589

ABSTRACT:
A method for isolating areas of silicon from a substrate 50 includes the steps of: providing a buried N+ region 52 in the substrate; forming an intrinsic epitaxial layer 12 onto the N+ region; etching trenches 18, 20 through the intrinsic epitaxial layer to thereby form a desired isolation region 16 of intrinsic epitaxial material; laterally etching a cavity 22 underneath the desired isolation region; and, forming an insulation layer 24 of insulation material along the bottom of the desired isolation region exposed by the former etching steps.

REFERENCES:
patent: 4502913 (1985-05-01), Lechaton et al.
patent: 4661832 (1987-04-01), Lechaton et al.
patent: 4888300 (1989-12-01), Burton
"A New SOI Fabrication Technique for Ultrathin Active Layer of Less the 80 nm", by H. Horie, et al., 1990 Symposium on VLSI Technology.

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