Active solid-state devices (e.g. – transistors – solid-state diode – Combined with electrical contact or lead – Bump leads
Reexamination Certificate
2007-05-22
2007-05-22
Pham, Hoai (Department: 2814)
Active solid-state devices (e.g., transistors, solid-state diode
Combined with electrical contact or lead
Bump leads
C257S780000
Reexamination Certificate
active
11133279
ABSTRACT:
A semiconductor device, which is capable of suppressing interfacial breakdown between a solder ball and a conductive film, is provided. The semiconductor device of the present invention, when “a” is distance between a terminal part of the solder ball108in a face coming into contact with an insulating resin layer105and an upper periphery of a via104, and “b” is distance between a terminal part of the UBM film107and the upper periphery of the via104, the semiconductor device is made to fulfill with 0<a/b≦2.
REFERENCES:
patent: 6891274 (2005-05-01), Chen et al.
patent: 7064446 (2006-06-01), Barnak et al.
patent: 2001-93928 (2001-04-01), None
NEC Electronics Corporation
Pham Hoai
Young & Thompson
LandOfFree
Bump structure does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Bump structure, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Bump structure will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-3742531