Semiconductor device manufacturing: process – Chemical etching – Liquid phase etching
Reexamination Certificate
2005-03-01
2005-03-01
Chen, Kin-Chan (Department: 1765)
Semiconductor device manufacturing: process
Chemical etching
Liquid phase etching
C174S260000
Reexamination Certificate
active
06861370
ABSTRACT:
A bump formation method and a bump formation apparatus can be gained wherein the reliability of a semiconductor device is enhanced by removing satellites that may be generated by a solder jet-type nozzle. This bump formation method is a method forming a bump on an electrode pad (2) provided on a work piece (1) by using a nozzle (21) of a solder jet system that discharges a molten solder drop (8) and is provided with the coating layer formation step of forming a coating layer (3, 5, 6, 7) having a portion that temporarily protects the work piece (1), the solder drop discharging step of discharging a molten solder drop (8) from the nozzle (21) toward the electrode pad (2) after the coating layer formation step and the coating layer removal step of removing the coating layer (3, 5, 6, 7) in the region other than the region beneath the solder drop formed in the solder drop discharging step.
REFERENCES:
patent: 5282565 (1994-02-01), Melton
patent: 5462638 (1995-10-01), Datta et al.
patent: 6399426 (2002-06-01), Capote et al.
patent: 6445001 (2002-09-01), Yoshida
patent: 6455785 (2002-09-01), Sakurai et al.
patent: 60-240142 (1985-11-01), None
patent: 63-17545 (1988-01-01), None
patent: 363017545 (1988-01-01), None
patent: 2-172230 (1990-07-01), None
patent: 3-138942 (1991-06-01), None
patent: 4-199771 (1992-07-01), None
patent: 9-246706 (1997-09-01), None
patent: 2000-31184 (2000-01-01), None
Chen Kin-Chan
Renesas Technology Corp.
LandOfFree
Bump formation method does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Bump formation method, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Bump formation method will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-3371814