Active solid-state devices (e.g. – transistors – solid-state diode – Combined with electrical contact or lead – Ball or nail head type contact – lead – or bond
Reexamination Certificate
2007-09-18
2007-09-18
Mai, Anh Duy (Department: 2814)
Active solid-state devices (e.g., transistors, solid-state diode
Combined with electrical contact or lead
Ball or nail head type contact, lead, or bond
C257S736000, C257S738000, C257SE23021
Reexamination Certificate
active
10710419
ABSTRACT:
The present invention provides a wafer structure having a plurality of bonding pad, an adhesion layer, a barrier layer, a wetting layer, a plurality of bump, a first passivation layer and a second passivation layer. The bonding pads are disposed on the active surface of the wafer and exposed by the first passivation layer. The second passivation layer is disposed on the first passivation layer and exposing the bonding pads. An adhesion layer is disposed on the bonding pad and covers a portion of the first passivation layer. The second passivation layer covers the first passivation layer and a portion of the adhesion layer. The barrier layer and the wetting layer are sequentially disposed on the adhesion layer and the bumps are disposed on the wetting layer.
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Advanced Semiconductor Engineering Inc.
Duy Mai Anh
Jianq Chyun IP Office
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