Patent
1988-09-23
1990-11-13
Sikes, William L.
357 65, H01L 2348, H01L 2946, H01L 2954, H01L 2962
Patent
active
049705717
ABSTRACT:
According to the present invention, there is provided a method for forming a bump and comprising the steps of dipping a semiconductor element with an Al electrode and a passivation film formed thereon in a palladium solution containing 5 to 2,000 ppm of at least one element selected from the group consisting of Zn, Pb, Sn, Cd, and Cr, selectively precipitating palladium on the electrode, and conducting electroless nickel-plating on the semiconductor element, including the electrode on which palladium is precipitated.
REFERENCES:
patent: 4680610 (1987-07-01), Pammer
patent: 4831432 (1989-05-01), Hori et al.
Inaba Michihiko
Iwase Nobuo
Yamakawa Koji
Kabushiki Kaisha Toshiba
Sikes William L.
Wise Robert E.
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