Active solid-state devices (e.g. – transistors – solid-state diode – Physical configuration of semiconductor – With thin active central semiconductor portion surrounded by...
Reexamination Certificate
2007-10-09
2007-10-09
Crane, Sara (Department: 2811)
Active solid-state devices (e.g., transistors, solid-state diode
Physical configuration of semiconductor
With thin active central semiconductor portion surrounded by...
C257S622000
Reexamination Certificate
active
10938436
ABSTRACT:
A finFET device includes a semiconductor substrate having specific regions surrounded with a trench. The trench is filled with an insulating layer, and recess holes are formed within the specific regions such that channel fins are formed by raised portions of the semiconductor substrate on both sides of the recess holes. Gate lines are formed to overlie and extend across the channel fins. Source/drain regions are formed at both ends of the channel fins and connected by the channel fins. Other embodiments are described and claimed.
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Seo Hyeoung-Won
Song Du-Heon
Yang Woun-Suck
Youn Jae-Man
Arena Andrew O.
Crane Sara
Marger & Johnson & McCollom, P.C.
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