Bulk semiconductor lasers at submillimeter/far infrared waveleng

Coherent light generators – Particular active media – Semiconductor

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372 4, 372 37, 372 66, 372 69, 372 94, 257 1, H01S 318, H01S 330, H01S 300, H01S 3083

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057843970

ABSTRACT:
A p-Ge laser operating at submillimeter wavelengths in Voigt configuration using a regular permanent magnet. The invention is improvement over prior art Ge Lasers which use superconducting magnets that require liquid helium to cool the magnets along with the Ge crystal. Although the subject invention requires cooling(refrigerant) of the Ge crystal itself, it does not need liquid helium. The permanent magnet can be Nd.sub.2 Fe.sub.14 B. The emissions using the novel invention were observed over a wider range of electric-field magnitude in Voigt configuration at a given magnetic field as compared to that of the prior system. The free space beam profile of the subject invention is Gaussian. The emission-strength of the subject invention is sufficient between 4 and 10K that a closed-cycle refrigerator can be used to cool the crystal rather than the liquid helium used in all prior p-Ge lasers. The open architecture of the permanent magnet facilitates use of cooling fins/heat sinks, which are demonstrated to increase repetition rate and energy output over all prior p-Ge lasers, which do not use such. Since permanent magnets can be cut to any shape and are not restricted to solenoid geometrics, novel laser configurations including ring lasers and oscillator/amplifiers can be realized in contrast to prior p-Ge lasers, which are exclusively oscillators only.

REFERENCES:
patent: 3569798 (1971-03-01), Amantea
patent: 3708763 (1973-01-01), Paul
patent: 3841107 (1974-10-01), Clark
patent: 3851174 (1974-11-01), Tynan et al.
patent: 3978417 (1976-08-01), Fletcher et al.
patent: 4194168 (1980-03-01), Jarrett et al.
patent: 4344302 (1982-08-01), Jarrett, Jr. et al.
patent: 4450460 (1984-05-01), Morimoto
patent: 4614930 (1986-09-01), Hickey et al.
patent: 4739287 (1988-04-01), Staupendahl et al.
patent: 4749952 (1988-06-01), Morimoto
patent: 4806885 (1989-02-01), Morimoto
patent: 4823177 (1989-04-01), Prinz et al.
patent: 4879722 (1989-11-01), Dixon et al.
patent: 4881814 (1989-11-01), Hoult
patent: 5074682 (1991-12-01), Uno et al.
patent: 5209646 (1993-05-01), Smither
patent: 5314547 (1994-05-01), Heremans et al.
Gornik, "Tunable Far Infra-red Sources Based on Landau-Level Transitions", Optics and Laser Technology, vol. 7, No. 3, pp. 121-126, Jun. 1975.
Brown et al, "Characteristics of a Linearly Pumped Laser Oscillator-Amplifier at 496 um", Applied Physics Letters, vol. 28, No. 11, pp. 654-656, Jun. 1976.
Vorobjev et al., "Generation of Far-Infrared Radiation by Hot Holes in Germanium and Silicon in E.sub.- H Fields", Optical and Quantum Electronics, vol. 23, pp. S221-S229 (no month), 1991.
Hosako et al., "p-Type Ge Far-Infrared Laser Oscillation in Voigt Configuration", Semicond. Sci. Technol., vol. 7, pp. B645-B648, (no month), 1992.
Park et al., "Submm p-Ge Laser Using a Regular Permanent Magnet", OSA Proceedings on Advanced Solid-State Lasers, vol. 24, pp. 277-281 (no month), 1995.
Submillimeter P-Ge Laser Using a Voigt-Configured Permanent Magnet, Kijuyn Park, Robert E. Pea Weidner, Jin J. Kim, Submitted to IEEE Journal of Quantum Electronics for publication (no date available).
"Abstimmbarer p-Germanium-Einkristall-Laser Fur Den Wellenlangenbereich Von 70.sub.- M BIS 350 Tunable P-Germanium Monobrystal Laser for the Wavelength Region From 70.sub.- M to 350.sub.- M", E. Brundermann, et al., Laser und Optoelektronik, Nov. 1992, pp. 48-60.
"Far-Infrared Semiconductor Lasers", Optical and Quantum Electronics, 1991 Chapman and Hall, Ltd., E. Gornik and Professor A. A. Andronov.

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