Bulk, polycrystalline switching materials for threshold and/or m

Details Bulk, polycrystalline switching materials for threshold and/or m Bulk, polycrystalline switching materials for threshold and/or m

1982-06-21

1984-09-18

Barr, Josephine

Compositions

Electrically conductive or emissive compositions

Metal compound containing

252521, 252518, 338 13, 338 20, 338 21, 338309, 264 61, 264 65, 264 66, 264104, H01B 106

Patent

active

044722966

ABSTRACT:
A new group of bulk polycrystalline materials which are capable of exhibiting, selectively, either memory switching or threshold switching. The body of the material, which can be molded into a suitable ceramic resistor configuration with ohmic electrodes and a sintered body composition, comprises as a majority proportion zinc oxide with the balance being another polycrystalline inorganic oxide such as bismuth oxide, cobalt oxide, chromium oxide, antimony oxide, praseodymium oxide, lanthanum oxide, holmium oxide and manganese oxide, or mixtures thereof.

REFERENCES:
patent: 4254070 (1981-03-01), Yodogawa et al.
patent: 4265844 (1981-05-01), Yokomizo et al.
patent: 4272411 (1981-06-01), Sokoly et al.

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