Bulk image modeling for optical proximity correction

Computer-aided design and analysis of circuits and semiconductor – Design of semiconductor mask or reticle – Manufacturing optimizations

Reexamination Certificate

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C716S055000, C716S051000, C716S111000, C716S136000, C700S098000, C700S121000, C700S120000, C430S005000, C378S035000, C382S144000, C382S145000, C382S154000

Reexamination Certificate

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08006203

ABSTRACT:
A method is described herein for predicting lateral position information about a feature represented in an integrated circuit layout for use with an integrated circuit fabrication process, where the process projects an image onto a resist. The method includes providing a lateral distribution of intensity values of the image at different depths with the resist. Next, the lateral position of an edge point of the feature is predicted in dependence upon a particular resist development time, and further in dependence upon the image intensity values at more than one depth within the resist.

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International Search Report for PCT/US2009/052361 mailed Mar. 16, 2010.

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