Bulk copper species treatment of thin film photovoltaic cell...

Semiconductor device manufacturing: process – Making device or circuit responsive to nonelectrical signal – Responsive to electromagnetic radiation

Reexamination Certificate

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C257SE21466, C136S265000

Reexamination Certificate

active

08008111

ABSTRACT:
A method for forming a thin film photovoltaic device. The method includes providing a transparent substrate comprising a surface region. A first electrode layer is formed overlying the surface region. A copper layer is formed overlying the first electrode layer and an indium layer is formed overlying the copper layer to form a multi-layered structure. The method subject at least the multi-layered structure to a thermal treatment process in an environment containing a sulfur bearing species to form a bulk copper indium disulfide material. The bulk copper indium disulfide material includes one or more portions of copper indium disulfide material characterized by a copper-to-indium atomic ratio of less than about 0.95:1 and a copper poor surface comprising a copper to indium atomic ratio of less than about 0.95:1. The method subjects the copper poor surface and one or more portions of the bulk copper indium disulfide material to copper species to convert the copper poor surface from an n-type characteristic to a p-type characteristic and to convert any of the one or more portions of the bulk copper indium disulfide material having the copper-to-indium atomic ratio of less than about 0.95:1 from a p-type characteristic to an n-type characteristic. A window layer is formed overlying the copper indium disulfide material.

REFERENCES:
patent: 4335266 (1982-06-01), Mickelsen et al.
patent: 4442310 (1984-04-01), Carlson et al.
patent: 4581108 (1986-04-01), Kapur et al.
patent: 4996108 (1991-02-01), Divigalpitiya et al.
patent: 5125984 (1992-06-01), Kruehler et al.
patent: 5261968 (1993-11-01), Jordan
patent: 5501744 (1996-03-01), Albright et al.
patent: 5536333 (1996-07-01), Foote et al.
patent: 5665175 (1997-09-01), Safir
patent: 6307148 (2001-10-01), Takeuchi et al.
patent: 6328871 (2001-12-01), Ding et al.
patent: 6635307 (2003-10-01), Huang et al.
patent: 7179677 (2007-02-01), Ramanathan et al.
patent: 7442413 (2008-10-01), Zwaap et al.
patent: 7544884 (2009-06-01), Hollars
patent: 7955891 (2011-06-01), Wieting
patent: 7960204 (2011-06-01), Lee
patent: 2005/0109392 (2005-05-01), Hollars
patent: 2006/0220059 (2006-10-01), Satoh et al.
patent: 2007/0089782 (2007-04-01), Scheuten et al.
patent: 2007/0116892 (2007-05-01), Zwaap
patent: 2007/0151596 (2007-07-01), Nasuno et al.
patent: 2007/0169810 (2007-07-01), Van Duren et al.
patent: 2008/0041446 (2008-02-01), Wu et al.
patent: 2008/0092945 (2008-04-01), Munteanu et al.
patent: 2008/0092953 (2008-04-01), Lee
patent: 2009/0087942 (2009-04-01), Meyers
patent: 2009/0145746 (2009-06-01), Hollars
patent: 2009/0234987 (2009-09-01), Lee et al.
patent: 2009/0235983 (2009-09-01), Girt et al.
patent: 2009/0235987 (2009-09-01), Akhtar et al.
patent: 2009/0293945 (2009-12-01), Peter
patent: 2010/0087016 (2010-04-01), Britt et al.
patent: 2010/0087026 (2010-04-01), Winkeler et al.
patent: 2010/0096007 (2010-04-01), Mattmann et al.
patent: 2010/0101648 (2010-04-01), Morooka et al.
patent: 2010/0101649 (2010-04-01), Huignard et al.
patent: 2011/0070690 (2011-03-01), Wieting
patent: 2011/0073181 (2011-03-01), Wieting
Ellmer et al., Copper Indium Disulfide Solar Cell Absorbers Prepared in a One-Step Process by Reactive Magnetron Sputtering from Copper and Indium Targets; Elsevier Science B.V; Thin Solid Films 413 (2002) pp. 92-97.
International Search Report & Written Opinion of PCT Application No. PCT/US 09/46161, date of mailing Jul. 27, 2009, 14 pages total.
International Search Report & Written Opinion of PCT Application No. PCT/US 09/46802, mailed on Jul. 31, 2009, 11 pages total.
Onuma et al., Preparation and Characterization of CuInS Thin Films Solar Cells with Large Grain, Elsevier Science B.V; Solar Energy Materials & Solar Cells 69 (2001) pp. 261-269.
Final Office Action of May 31, 2011 for U.S. Appl. No. 12/621,489, 13 pages.
Notice of Allowance of May 25, 2011 for U.S. Appl. No. 12/566,651, 8 pages.
Non-Final Office Action of May 2, 2011 for U.S. Appl. No. 12/953,729, 9 pages.
Non-Final Office Action of May 2, 2011 for U.S. Appl. No. 12/953,725, 9 pages.
Non-Final Office Action of May 2, 2011 for U.S. Appl. No. 12/953,721, 9 pages.
Non-Final Office Action of May 2, 2011 for U.S. Appl. No. 12/953,716, 9 pages.
Non-Final Office Action of May 2, 2011 for U.S. Appl. No. 12/953,708, 9 pages.
Non-Final Office Action of May 2, 2011 for U.S. Appl. No. 12/953,701, 9 pages.
Non-Final Office Action of Apr. 28, 2011 for U.S. Appl. No. 12/237,369, 17 pages.
Notice of Allowance of Apr. 27, 2011 for U.S. Appl. No. 12/564,886, 11 pages.
Notice of Allowance of Apr. 25, 2011 for U.S. Appl. No. 12/563,065, 11 pages.
Notice of Allowance of Apr. 19, 2011 for U.S. Appl. No. 12/567,715, 11 pages.
Notice of Allowance of Apr. 8, 2011 for U.S. Appl. No. 12/953,697, 11 pages.
Notice of Allowance of Apr. 5, 2011 for U.S. Appl. No. 12/953,679, 11 pages.
Notice of Allowance of Apr. 5, 2011 for U.S. Appl. No. 12/953,674, 11 pages.

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