Bulk charge transfer semiconductor device

Details Bulk charge transfer semiconductor device Bulk charge transfer semiconductor device

1973-04-03

1977-06-28

Wojciechowicz, Edward J.

H01L

Patent

active

040329526

ABSTRACT:
In a charge transfer semiconductor device majority carriers are transferred within a semiconductor body on a substrate from means for introducing majority carriers to means for detecting transferred majority carriers by applying pulsed voltages to a series of electrodes disposed on an insulating layer which is disposed on one surface of the semiconductor body between the introducing means and the detecting means. Depletion regions are formed within the semiconductor body, so that one end of a depletion region below one electrode reaches the substrate and another end of a depletion region below an electrode next to the one electrode does not reach the substrate, whereby majority carriers below the one electrode are pushed out below the next electrode.

REFERENCES:
patent: 3792322 (1974-02-01), Boyle et al.

Affiliated with

Also associated with

Rating

Bulk charge transfer semiconductor device does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Bulk charge transfer semiconductor device, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Bulk charge transfer semiconductor device will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-1525235