Bulk charge modulated device photocell with lateral charge drain

Fishing – trapping – and vermin destroying

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437 53, 437 41, H01L 3118, H01L 21265, H01L 2170

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active

054242231

ABSTRACT:
The semiconductor image sensor element comprises a transistor gate potential well 102, a virtual potential well 100 adjacent the transistor gate potential well 102, a clear gate barrier 104 adjacent the virtual potential well 100, a clear drain 30 adjacent the clear gate barrier 104, and a charge sensor 28 for sensing charge levels in the transistor gate potential well 102. The charge levels are responsive to light incident on the device. Charge is stored in the virtual potential well 100 during charge integration. After charge integration, the charge is transferred into the transistor gate potential well 102 from the virtual potential well 100 for charge detection by the charge sensor 28. After charge detection, the charge is transferred from the transistor potential well 102 to the clear drain 30.

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patent: 5260228 (1993-11-01), Taguchi
patent: 5288651 (1994-02-01), Nakazawa
patent: 5290722 (1994-03-01), Mynecek

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