Bulk charge modulated device photocell with lateral charge drain

Details Bulk charge modulated device photocell with lateral charge drain Bulk charge modulated device photocell with lateral charge drain

1993-09-21

1994-08-23

Ngo, Ngan Van

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Charge transfer device

257222, 257224, 257229, 257237, 257243, 257247, 257249, 257291, 257448, 257459, 348305, H01L 2978, H01L 2714, H01L 3100

Patent

active

053410084

ABSTRACT:
The semiconductor image sensor element comprises a transistor gate potential well 102, a virtual potential well 100 adjacent the transistor gate potential well 102, a clear gate barrier 104 adjacent the virtual potential well 100, a clear drain 30 adjacent the clear gate barrier 104, and a charge sensor 28 for sensing charge levels in the transistor gate potential well 102. The charge levels are responsive to light incident on the device. Charge is stored in the virtual potential well 100 during charge integration. After charge integration, the charge is transferred into the transistor gate potential well 102 from the virtual potential well 100 for charge detection by the charge sensor 28. After charge detection, the charge is transferred from the transistor potential well 102 to the clear drain 30.

REFERENCES:
patent: 4901129 (1990-02-01), Hynecek
patent: 5151380 (1992-09-01), Hynecek
patent: 5285091 (1994-02-01), Hamasaki
BCMD-An Improved Photosite Structure for Density Image Sensors, Jaroslav Hynecek, IEEE Transactions in Electron Devices, vol. 38, No. 5, May, 1991, pp. 1011-1020.

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