Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Charge transfer device
Patent
1993-02-19
1994-05-31
Mintel, William
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Charge transfer device
257229, 257290, 257291, 257448, 257 72, H01L 2714
Patent
active
053171748
ABSTRACT:
A bulk charge modulated MOSFET for sensing light comprising a semiconductor substrate with a gate region of a first conductivity type formed in the substrate. The gate region forms a potential well for carriers of the first conductivity type. The well is formed at a substantial depth from the surface of the gate region. The carriers are formed responsive to incident light. The gate region collects the carriers generated at depths less than the well. A source region of a second conductivity type is formed in the semiconductor substrate laterally adjacent the gate region. The source region is operable to sense a change in threshold voltage of the MOSFET responsive to the collection of carriers by the gate region. A drain region of the second conductivity type is formed in the layer adjacent the gate region and spaced from the source. The drain region is connected to a voltage source. The voltage source is pulsed to create a large potential well that extends under the gate region from the source to the drain during charge integration period and a smaller potential well during readout period.
REFERENCES:
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patent: 4644402 (1987-02-01), Yamada
patent: 4757365 (1988-07-01), Boudewijns
patent: 4901129 (1990-02-01), Hynecek
patent: 5192990 (1993-03-01), Stevens
Hynecek, "BCMD-An Improved Photosite Structure for High-Density Image Sensors," IEEE Transactions on Electron Devices, vol. 38, No. 5, May 1991, pp. 1011-1019.
Forbes et al., "Characteristics of the Indium-Doped Infrared Sensing MOSFET (IRFET)", IEEE Transactions on Electron Devices, vol. Ed-23, No. 12, Dec. 1976, pp. 1272-1278.
"BCMD-An Improved Photosite Structure for High-Density Image Sensors," Jaroslav Hynecek, IEEE Transactions on Electron Devices, vol. 38, No. 5, May 1991, pp. 1011-1020.
Donaldson Richard L.
Hiller William E.
Mintel William
Stewart Alan K.
Texas Instruments Incorporated
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