Bulk channel charge transfer device with bias charge

Details Bulk channel charge transfer device with bias charge Bulk channel charge transfer device with bias charge

1975-10-02

1977-03-15

Larkins, William D.

Electrical transmission or interconnection systems

Nonlinear reactor systems

Parametrons

307221D, 357 89, H01L 2978, G11C 1928

Patent

active

040127583

ABSTRACT:
A charge transfer device in which information in the form of packets of majority charge carriers can be transported through the bulk of a semiconductor layer via charge storage sites, in which the semiconductor regions belonging to the storage sites have a more highly and a lower doped part of the same conductivity type and in which means are present to introduce packets of background charge, so that each packet of information-representing charge can be transported together with a packet of background charge as a collective charge packet.

REFERENCES:
patent: 3660697 (1972-05-01), Berlund et al.
patent: 3784847 (1974-01-01), Kurz et al.
patent: 3792322 (1974-02-01), Boyle et al.
patent: 3796932 (1974-03-01), Amelio et al.
Kosonocky et al. "Two-phase Charge Coupled Devices with Overlapping Polysilicon and Aluminum Gates" RCA Review vol. 34 (3/73) pp. 164-203.
Erb et al. "An Overlapping Electrode Buried Channel CCD" IEEE Int. Electron Device Meeting Tech. Dig. (12/73) pp. 24-26.
Erb and Nummedal "Buried Channel Charge for Infrared Applications" CCD Applications Conf., San Diego, Proc. (9/73) pp. 157-167.
Esser "The Peristaltic Charge Coupled Device" CCD Applications Conf., San Diego, Proc. (9/73) pp. 269-275.
Takemoto et al. "Bulk Charge-Transfer Device" Proc. 5th Int. Conf. Solid State Device, Tokyo (8/73) publ. in Journal Japan Society of Applied Physics, vol. 43 (4/74) supplement pp. 264-268.

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