Bulk channel charge coupled semiconductor devices

Electrical transmission or interconnection systems – Nonlinear reactor systems – Parametrons

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307221D, 357 59, H01L 2978, H01L 2904, G11C 1928

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active

040743020

ABSTRACT:
A semiconductor device includes a semiconductor body having a semiconductor layer of one conductivity type, means for enabling the semiconductor layer to be locally fully depleted without avalanche multiplication in order to allow the movement of majority charge carriers representative of information via the interior of the layer to one or more storage sites in the layer, means for enabling the reading of information present at least in one storage site comprising an insulated gate field effect transistor structure having its channel region present at the surface of the semiconductor layer above said one storage site and between source and drain regions of the opposite conductivity type, and means for enabling the temporary confinement of the quantity of majority charge carriers in said one storage site to the interior of the layer without mixing of the stored charge carriers in said one storage site and the mobile minority charge carriers in the transistor channel in order that the current flow in the transistor channel when the transistor gate electrode is maintained at any given potential is dependent upon the quantity of charge in the said one storage site. Various semiconductor devices, particularly of the type referred to as bulk channel charge coupled devices, are disclosed, including a charge coupled imaging device, a device having a relatively high charge handling capacity, a photo-detector, a tapped delay line, a random access memory and an image display device.

REFERENCES:
patent: 3739240 (1973-06-01), Krambeck
patent: 3918070 (1975-11-01), Shannon
patent: 3987475 (1976-10-01), Ibrahim
patent: 4032952 (1977-06-01), Ohba et al.
Board et al., "CCFET: An Active Charge-Coupled Device", Electronics Letters, vol. 11 (9/75), pp. 452-453.

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