Bulk channel CCD with switchable draining of minority charge car

Electrical transmission or interconnection systems – Nonlinear reactor systems – Parametrons

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357 24, G11C 1928, H01L 2978

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active

042074770

ABSTRACT:
The invention relates to a charge-coupled device in which the charge transport in the form of majority charge carriers takes place mainly via the bulk of a semiconductor layer of one conductivity type. The semiconductor layer has zones of the second conductivity type which do not have an electric contact but which are electrically biased by means of the isolation zone surrounding the semiconductor layer which can be connected to the zones by induction by means of the electrodes and forms a drain for charge carriers from the zones. In an embodiment the device is formed by a two-phase charge-coupled device in which the zones serve to obtain asymmetry in the system. In another embodiment the device is a series-parallel-series multiplex CCD in which the zones form isolation zones between the parallel lines.

REFERENCES:
patent: 3789267 (1974-01-01), Krambeck et al.
patent: 3896474 (1975-07-01), Amelio et al.
patent: 3896485 (1975-07-01), Early
patent: 3913077 (1975-10-01), Erb
patent: 4012759 (1977-03-01), Esser
patent: 4028716 (1977-06-01), Van Santen et al.
patent: 4032952 (1977-06-01), Ohba et al.
Erb et al., "An Overlapping Electrode Buried Channel CCD," IEEE Int. Electron Devices Meeting, (12/73), Tech. Dig., pp. 24-26.

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