Bulk bias voltage level detector in semiconductor memory device

Details Bulk bias voltage level detector in semiconductor memory device Bulk bias voltage level detector in semiconductor memory device

2008-04-07

2010-06-08

Nguyen, Long (Department: 2816)

Miscellaneous active electrical nonlinear devices, circuits, and

Specific signal discriminating without subsequent control

By amplitude

C327S078000, C327S080000

Reexamination Certificate

active

07733132

ABSTRACT:
There is provided a bulk bias voltage VBB level detector in a semiconductor memory device capable of improving tWR fail generated at a low temperature by compensating a temperature variance. The VBB level detector includes A bulk bias voltage level detector in a semiconductor memory device, comprising: a voltage divider for generating detection voltage based on an inputted bulk voltage; and a CMOS circuit for generating a output signal having predetermined logic value determined by the detection voltage wherein the voltage divider includes a first transistor having a gate coupled to a ground voltage and a second transistor having a gate coupled to an internal power voltage and a bulk coupled to the inputted bulk voltage.

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