Bulk avalanche semiconductor switch using a mesa structure

Details Bulk avalanche semiconductor switch using a mesa structure Bulk avalanche semiconductor switch using a mesa structure

1987-09-03

1989-09-05

Nelms, David C.

Radiant energy

Photocells; circuits and apparatus

Photocell controlled circuit

H01J 4014

Patent

active

048641197

ABSTRACT:
A switch using an improved method of optically-triggered avalanche breakdown which can produce pulses of 100 picoseconds or longer duration that can deliver five kilovolts into 50 ohms using a standard laser diode. A semiconductor block is provided with contacts on opposing sides across which a high-voltage less than the avalanche breakdown voltage is applied. One of the electrodes is on a mesa on one side of the block. The mesa is then irradiated with electromagnetic radiation. The wavelength of the radiation and the absorption coefficient of the semiconductor block are chosen so that the absorption depth of the majority of the radiation is less than the distance between the contacts. This results in a conduction area where absorption occurs, thus applying most of the high voltage across the distance beyond where the radiation is absorbed. This provides field compression and generates an avalanche breakdown field across the remaining distance of the semiconductor block.

REFERENCES:
patent: 2629800 (1953-02-01), Pearson
patent: 3448351 (1969-06-01), Baertsch

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