Electrical generator or motor structure – Non-dynamoelectric – Piezoelectric elements and devices
Reexamination Certificate
2008-05-30
2010-06-01
Dougherty, Thomas M (Department: 2837)
Electrical generator or motor structure
Non-dynamoelectric
Piezoelectric elements and devices
C310S321000, C029S025350, C216S002000, C216S039000
Reexamination Certificate
active
07728485
ABSTRACT:
A BAW device includes a semiconductor substrate with a surface region, an insulating layer formed on the surface region and a piezoelectric layer sandwiched by a first and second electrode, wherein the second electrode is formed on the insulating layer. The surface region is performed such that a voltage dependence of a capacitance between the substrate and the second electrode is substantially suppressed.
REFERENCES:
patent: 7180224 (2007-02-01), Bouche et al.
patent: 7559128 (2009-07-01), Kitagawa et al.
patent: 7596840 (2009-10-01), Iwashita et al.
patent: 2004/0027216 (2004-02-01), Ma et al.
patent: 2006/0273866 (2006-12-01), Vilander
patent: 2006/0284707 (2006-12-01), Larson et al.
patent: 2006/0290446 (2006-12-01), Aigner et al.
patent: 2008/0055020 (2008-03-01), Handtmann et al.
patent: 101154934 (2008-04-01), None
patent: 1 895 660 (2008-03-01), None
patent: -62-233914 (1987-10-01), None
Sze, S., “Semiconductor Devices: Physics and Technology,” 2nd Edition, Chapter 7: MIS Diode and Charge-Coupled Device, pp. 362-427, 1981, John Wiley & Sons, Inc., Hoboken, NJ.
Rong, B., et al., “Surface-Passivated High-Resistivity Silicon Substrates for RFICs,” IEEE Electron Device Letters, vol. 25, No. 4, Apr. 2004, pp. 176-178, IEEE.
Aigner, R., et al., “Behavior of BAW Devices at High Power levels,” 2005 IEEE MTT-S International Microwave Symposium Digest, Jun. 12-17, 2005, pp. 429-432, IEEE.
Franosch Martin
Handtmann Martin
Avago Technologies Wireless IP (Singapore) Pte. Ltd.
Dougherty Thomas M
LandOfFree
Bulk acoustic wave device and a method of its manufacturing does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Bulk acoustic wave device and a method of its manufacturing, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Bulk acoustic wave device and a method of its manufacturing will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-4241190