Built-in notched channel MOS-FET triodes for high frequency appl

Details Built-in notched channel MOS-FET triodes for high frequency appl Built-in notched channel MOS-FET triodes for high frequency appl

1978-11-21

1980-03-04

Wojciechowicz, Edward J.

357 4, 357 55, 357 68, H01L 2978

Patent

active

041919637

ABSTRACT:
A novel built-in notched channel MOS-FET device with an effective channel length smaller than the effective channel length of conventional built-in channel MOS-FET devices. The device comprises an insulating substrate, a semiconductor layer with two n.sup.+ -type regions separated by an n-type region, insulation over the semiconductor region, with an opening in each n.sup.+ -type semiconductor region for metal contacts, a notch in the n-type semiconductor region, at least half of the notch being in the n-type region and touching the boundary between one n.sup.+ -type semiconductor region and the n-type semiconductor region, and a metal contact above the notch, all of the metal contacts functioning as electrodes.

REFERENCES:
patent: 4084175 (1978-04-01), Ouyang

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