Built-in drive power-source semiconductor device

Miscellaneous active electrical nonlinear devices – circuits – and – Specific identifiable device – circuit – or system – With specific source of supply or bias voltage

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Details

327533, 327535, 327537, 327514, 327515, 327369, 327389, 327391, 250551, H01J 1982, G05F 110, H03K 1716, G02B 2700

Patent

active

054753333

ABSTRACT:
A built-in drive-power-source semiconductor device of low cost having a good switching characteristic and a decreased switching loss. In operation, a reference charge potential is applied to a charging IGBT by a first constant voltage diode thereby turning on the IGBT to charge a battery means. When the charge potential of the battery means reaches a prescribed level, a MOSFET is turned on by a second constant voltage diode, shortcircuiting the first constant voltage diode, causing the charging IGBT is turn off to eliminate overcharging of the batter means and maintain the potential of the battery means at a prescribed value. The semiconductor device includes a light emitting circuit for emitting light in response to an input control signal, a photo voltage generating circuit for charging the battery portion with at least a portion of the photo voltage generated in response to light from the light emitting circuit and, a disabling circuit for disabling the output IGBT when the battery means has not yet reached a sufficient level of charge potential.

REFERENCES:
patent: 5006737 (1991-04-01), Fay
patent: 5047988 (1991-09-01), Mizuta
patent: 5057694 (1991-10-01), Idaka et al.
patent: 5107138 (1992-04-01), Seki et al.
Copy of Examiner's letter and Search Report.
European Search Report dated Sep. 22, 1992.

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